DS1112SG Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

DS1112SG
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
Conditions
10ms half sine; T = 150^oC
case
V_R = 50% V_RRM - 1/4 sine
10ms half sine; T_case = 150^oC
V_R = 0
Max. Units
8.5
kA
360x 10³ A²s
10.5
kA
565 x 10³ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c)
Thermal resistance - junction to case
R_th(c-h)
Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T_stg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Clamping force 12.0kN
with mounting compound
Anode dc
Cathode dc
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.032 ^oC/W
- 0.064 ^oC/W
- 0.064 ^oC/W
- 0.008 ^oC/W
- 0.016 ^oC/W
-
160
o_C
-
150
o_C
–55 175
o_C
11.5 13.5 kN
3/7
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