DS1112SG Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Rectifier Diode

DS1112SG
CHARACTERISTICS
Symbol
Parameter
V_FM
Forward voltage
I_RM
Peak reverse current
Q_S
Total stored charge
I_rr
Reverse recovery current
V
Threshold voltage
TO
r
Slope resistance
T
CURVES
2500
Measured under pulse
conditions
2000
1500
1000
T_j = 25˚C
T_j = 150˚C
Conditions
At 1800A peak, T_case = 25^oC
At V_RRM, T_case = 150^oC
I_F = 1000A, dI_RR/dt = 3A/µs
T = 150˚C, V = 100V
case
R
At T = 150˚C
vj
At T = 150˚C
vj
Min. Max. Units
-
2.1
V
-
75 mA
- 3000 µC
-
90
A
-
0.9
V
-
0.93 mΩ
2500
2000
1500
dc
Half wave
3 phase
1000
500
500
0
0
0.5
1.5
2.5
3.5
0
Instantaneous forward voltage, V_F - (V)
500
1000
1500
Mean forward current, I_F(AV) - (A)
2000
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V_FM Equation:-
V_FM = A + Bln (I_F) + C.I_F+D.√I_F
Where
A = 1.249986
B = –0.17646
C = 0.000524
D = 0.041024
these values are valid for T_j = 125˚C for I_F 500A to 2500A
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