DIM200PKM33-F000 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – IGBT Chopper Module

SEMICONDUCTOR
DIM200PKM33-F000
ELECTRICAL CHARACTERISTICS
T_case = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Ices
Collector cut-off current
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125°C
-
-
15
mA
Ices
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
1
µA
VGE(TH) Gate threshold voltage
IC = 40mA, VGE = VCE
5.5
6.5
7.0
V
VCE(sat)€ Collector-emitter saturation voltage VGE = 15V, IC = 200A
-
2.8
-
V
VGE = 15V, IC = 200A, Tcase = 125°C
-
3.6
-
V
IF
Diode forward current
DC
-
-
200
A
IFM
Diode maximum forward current
tp = 1ms
VF€
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
IF = 200A
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
IF = 200A, Tcase = 125°C
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
-
400
A
-
2.9
2.9
-
-
V
-
3.0
3.0
-
-
V
-
36
-
nF
LM
Module inductance – per arm
-
-
40
-
nH
RINT
Internal resistance – per arm
-
-
0.5
-
mΩ
SCData Short circuit. Isc
Tj = 125°C, V cc = 2500V,
tp ≤ 10µs,
VCE(max) = VCES - L*×di/dt
IEC 60747-9
I1
-
1000
-
A
I2
-
930
-
A
Note:
€ Measured at the power busbars and not the auxiliary terminals
* _{L is the circuit inductance + LM}
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
5/10