DIM200PKM33-F000 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – IGBT Chopper Module

SEMICONDUCTOR
DIM200PKM33-F000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
AIN
AlSiC
33mm
20mm
175
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Rth(j-c) Thermal resistance - transistor
Continuous dissipation –
-
-
48 °C/kW
junction to case
Thermal resistance – diode (IGBT
Rth(j-c)
arm)
Continuous dissipation –
-
-
96 °C/kW
Thermal resistance- diode ( Diode
junction to case
arm)
96 °C/kW
Rth(c-h)
Thermal resistance – case to heatsink _{Mounting torque 5Nm}
(per module)
(with mounting grease)
-
-
16 °C/kW
Tj
Junction temperature
Transistor
-
-
150
°C
Diode
-
-
125
°C
Tstg
Storage temperature range
-
-40
-
125
°C
-
Screw torque
Mounting – M6
-
-
5
Nm
Electrical connections – M5 -
-
4
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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