DIM200PKM33-F000 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – IGBT Chopper Module

SEMICONDUCTOR
DIM200PKM33-F000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
IC(PK)
Pmax
I²t
Visol
QPD
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I²t value (IGBT arm)
Diode I²t value (Diode arm)
Isolation voltage – per module
Partial discharge - per module
VGE = 0V
Tcase = 90°C
1ms, Tcase =115°C
Tcase = 25°C, T j = 150°C
VR = 0, tP = 10ms, Tvj = 125°C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
Max. Units
3300
±20
200
400
2.6
20
20
6000
10
V
V
A
A
W
kA²S
V
pC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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