DFM600LXS18-A000 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information

DFM600LXS18-A000
TYPICAL CHARACTERISTICS
800
700
T_j = 25˚C
600
500
T_j = 125˚C
400
300
100
100
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 2 Diode typical forward characteristics
100
10
1
0.001
1
2
3
4
R_i (˚C/KW) 2.8086 10.5142 16.6906 66.004
τ_i (ms)
0.006863 1.8477 14.6244 76.68
0.01
0.1
1
10
Pulse width, t_p - (s)
Fig. 4 Transient thermal impedance
3000
1200
2000
1000
800
600
1000
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 5 Power dissipation
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 6 DC current rating vs case temperature
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