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| DFM600LXS18-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM600LXS18-A000
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
VF
Forward voltage
LM
Module inductance
V = 1800V, T = 125ËC
R
vj
IF = 600A
IF = 600A, Tvj = 125ËC
-
DYNAMIC ELECTRICAL CHARACTERISTICS
T = 25ËC unless stated otherwise.
vj
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 600A,
F
dIF/dt = 4000A/µs,
VR = 900V
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Q
Reverse recovery charge
rr
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 4000A/µs,
VR = 900V
Min. Typ. Max. Units
-
-
10 mA
-
2.0
2.3
V
-
2.0
2.3
V
-
15
-
nH
Min. Typ. Max. Units
-
440
-
A
-
160
-
µC
-
120
-
mJ
Min.
-
-
-
Typ.
510
270
180
Max. Units
-
A
-
µC
-
mJ
3/7
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