DFM600LXS18-A000 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information

DFM600LXS18-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
V_RRM
I_F
I
FM
I²t
Repetitive peak reverse voltage
Forward current
Max. forward current
I²t value fuse current rating
P_max
Maximum power dissipation
V_isol
Isolation voltage
Q_pd
Partial discharge
Test Conditions
T = 25˚C
vj
DC, T_case = 65˚C
T_case = 110˚C, t_p = 1ms
V_R = 0, t_p = 10ms, T_vj = 125˚C
T_case = 25˚C, T_vj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V₁ = 1500V, V₂ = 1100V, 50Hz RMS
Max. Units
1800 V
600 A
1200 A
120 A²s
2080 W
4.0 kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Al₂O₃
Cu
Creepage distance:
22mm
Clearance:
12mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Test Conditions
R_th(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
R_th(c-h)
Thermal resistance - case to heatsink Mounting torque 5Nm
(per module)
(with mounting grease)
T_j
Junction temperature
T_stg
Storage temperature range
-
Screw torque
-
-
Mounting - M6
Electrical connections - M6
Min. Typ. Max. Units
-
-
48 ˚C/kW
-
-
15 ˚C/kW
-
-
125 ˚C
–40
-
125 ˚C
-
-
5
Nm
-
-
5
Nm
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