DFM600BXS17-A000 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

SEMICONDUCTOR
TYPICAL CHARACTERISTICS
DFM600BXS17-A000
1600
100
V_F is measured at power busbars
and not the auxiliary terminals
1400
1200
1000
800
T_j = 25ûC
10
T_j = 125ûC
Diode
600
400
200
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Diode typical forward characteristics
Fig.3 Diode typical forward characteristics
1
1
Diode R_i (ûC/KW) 1.14
i ^(ms)
0.10
2
3
4
6.32 18.56 22.51
3.21 38.58 113.97
0.1
0.001
0.01
0.1
1
10
Pulse width, _pt - (s)
Fig.4 Transient thermal impedance
2500
2000
1500
1000
500
0
0
25
50
75
100
Case temperature,_cT- ¡C
Fig.5 Power dissipation
900
800
700
600
500
400
300
200
100
125
0
0
25
50
75
100
125
Case temperature,_cT- (¡C)
Fig.6 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
4/7
www.dynexsemi.com