DFM600BXS17-A000 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

SEMICONDUCTOR
DFM600BXS17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
V_RRM
I_F
I_FM
Repetitive peak reverse voltage
Forward current
Max. forward current
I_FSM
I²t
P_max
V_isol
Surge (non-repetitive) forward
current
I²t value fuse current rating
Maximum power dissipation
Isolation voltage – per module
Test Conditions
T_vj = 125°C
DC, T_case = 65°C, T_vj = 125°C
T_case =110 °C, t_p = 1ms
V_R = 0, t_P = 10ms, T_vj = 125°C
T_case = 25°C, T_vj = 125°C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1700
V
600
A
1200
A
3674
A
67.5
2000
4000
kA²s
W
V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Al₂O₃
Copper
20mm
11mm
425
Symbol
R_th(j-c)
R_th(c-h)
T_j
T_stg
-
Parameter
Test Conditions
Min. Typ. Max.
Units
Thermal resistance
Continuous dissipation –
-
-
50
°C/kW
junction to case
Thermal resistance – case to heatsink _{Mounting torque 5Nm}
(with mounting grease)
-
-
15
°C/kW
Junction temperature
-
-
-
125
°C
Storage temperature range
-
-40
-
125
°C
Screw torque
Mounting – M6
3
-
5
Nm
Electrical connections – M6 2.5
-
5
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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