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| DFM600BXS17-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM
Peak reverse current
VF
Forward voltage
LM
Inductance
Test Conditions
VR = 1200V, Tvj = 125°C
IF = 600A
IF = 600A, Tvj = 125°C
-
DYNAMIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
trr
Reverse recovery time
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 4500A/µs,
VR = 900V
Tcase = 125°C unless stated otherwise.
Symbol
Parameter
trr
Reverse recovery time
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 3800A/µs,
VR = 900V
DFM600BXS17-A000
Min. Typ. Max. Units
-
-
15
mA
2.0
V
2.05
V
-
20
-
nH
Min. Typ. Max. Units
1.4
µs
-
345
-
A
-
150
-
µC
-
105
-
mJ
Min. Typ. Max. Units
2.0
µs
-
330
-
A
-
255
-
µC
-
150
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/7
www.dynexsemi.com
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