DFM300BXS12-A000 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

DFM300BXS12-A000
TYPICAL CHARACTERISTICS
800
T_j = 25˚C
T_j = 125˚C
700
V_F is measured at power busbars
and not the auxiliary terminals
600
500
400
300
200
100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage, V_F - (V)
Fig.3 Diode typical forward characteristics
1200
100
10
1
1
2
3
4
Diode
0.1
0.001
R_i (˚C/KW)
τ_i (ms)
0.01
2.24 12.64 37.12 45.02
0.10 3.21 38.58 113.97
0.1
1
10
Pulse width, t_p - (s)
Fig.4 Transient thermal impedance
500
1000
400
800
300
600
200
400
100
200
0
0
4/7
25
50
75
100
125
Case temperature, T_c - °C
Fig.5 Power dissipation
0
0
25
50
75
100
125
Case temperature, T_c - (°C)
Fig.6 DC current rating vs case temperature
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