DFM300BXS12-A000 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

DFM300BXS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V_RRM
I_F
I
FM
I_FSM
I²t
Pmax
V_isol
Q_pd
Repetitive peak reverse voltage T = 125˚C
vj
Forward current (per arm)
DC, T_case = 70˚C, T_vj = 125˚C
Max. forward current
T_case = 110˚C, t_p = 1ms
Surge (non-repetitive) forward current
I²t value fuse current rating
Maximum power dissipation
Isolation voltage
V_R = 0, t_p = 10ms, T_vj = 125˚C
T = 25˚C, T = 125˚C
case
vj
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge
IEC1287. V₁ = 1200V, V₂ = 900V, 50Hz RMS
Max. Units
1200 V
300 A
600 A
2236 A
25 kA²s
1.0 kW
2.5 kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al₂O₃
Baseplate material: Cu
Creepage distance: 20mm
Clearance: 11mm
CTI (Critical Tracking Index): 425
Symbol
Parameter
R_th(j-c)
Thermal resistance - diode (per arm)
Test Conditions
Continuous dissipation -
junction to case
R
th(c-h)
T_j
T
stg
-
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M6
Min.
-
Typ.
-
Max. Units
100 ˚C/kW
-
-
15 ˚C/kW
-
-
125 ˚C
–40
-
125 ˚C
3
-
5
Nm
2.5
-
5
Nm
2/7
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