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| DFM300BXS12-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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DFM300BXS12-A000
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
V
Forward voltage
F
L
Inductance (module)
VR = 1200V, Tvj = 125ËC
IF = 300A
IF = 300A, Tvj = 125ËC
-
DYNAMIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
t
Reverse recovery time
rr
Irr
Reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
trr
Reverse recovery time
Irr
Reverse recovery current
Q
Reverse recovery charge
rr
Erec
Reverse recovery energy
Test Conditions
IF = 300A,
dIF/dt = 2250A/µs,
V = 600V
R
Test Conditions
I = 300A,
F
dIF/dt = 2250A/µs,
VR = 600V
Min. Typ. Max. Units
-
-
8
mA
-
2.0
2.5
V
-
2.05 2.55 V
-
16
-
nH
Min. Typ. Max. Units
-
0.4
-
µs
-
300
-
A
-
55
-
µC
-
17
-
mJ
Min. Typ. Max. Units
-
0.5
-
µs
-
320
-
A
-
85
-
µC
-
32
-
mJ
3/7
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