MA7001 Datasheet, PDF (3/15 Pages) Dynex Semiconductor – Radiation Hard 512x9 Bit FIFO

AC CHARACTERISTICS
Characteristics apply to pre-radiation at T_A = -55°C to +125°C, V_DD = 5V ±10% and post
100kRad(Si) total dose radiation at T_A = 25°C, V_DD = 5V ±10%. GROUP A SUBGROUP 9, 10, 11.
Symbol Parameter
Min.
Max. Units
t_RC
Read Cycle Time
110
-
ns
t_A
Access Time
-
100
ns
t_RR
Read Recovery Time
25
-
ns
t_RPW
Read Pulse Width (Note 2)
85
-
ns
t_RLZ
Read Pulse Low to Data Bus at Low Z (Note 3)
10
-
ns
t_DV
Data Valid from Read Pulse High
20
-
ns
t_RHZ
Read Pulse High to Data Bus at High Z (Note 3)
-
30
ns
t_WC
Write Cycle Time
100
-
ns
t_WPW
Write Pulse Width (Note 2)
80
-
ns
t_WR
Write Recovery Time
20
-
ns
t_DS
Data Setup Time
40
-
ns
t_DH
Data Hold Time
10
-
ns
t_RSC
Reset Cycle Time (Note 3)
100
-
ns
t_RS
Reset Pulse Width (Note 2)
80
-
ns
t_RSR
Reset Recovery Time (Note 3)
20
-
ns
t_RTC
Retransmit Cycle Time (Note 3)
100
-
ns
t_RT
Retransmit Pulse Width (Note 2)
80
-
ns
t_RTR
Retransmit Recovery Time (Note 3)
20
-
ns
t_EFL
Reset to Empty Flag Low
-
100
ns
t_REF
Read Low to Empty Flag Low
-
90
ns
t_RFF
Read High to Full Flag High
-
70
ns
t_WEF
Write High to Empty Flag High
-
70
ns
t_WFF
Write Low to Full Flag Low
-
90
ns
t_EFR
EF High to Valid Read (Note 3)
10
-
ns
t_RPI
Read Protect Indeterminant (Note 3)
-
35
ns
t_FFW
FF High to Valid Wrlte (Note 3)
10
-
ns
t_WPI
Write Protect Indeterminant (Note 3)
-
35
ns
Notes:
1. Timings referenced as in A.C. Test Conditions, figure 5
2. Pulse wldths less than minimum values are not allowed
3. Values guaranteed by deslgn, not currently tested
Figure 3b: AC Characteristics
MA7001
3/15