MA7001 Datasheet, PDF (2/15 Pages) Dynex Semiconductor – Radiation Hard 512x9 Bit FIFO

MA7001
DC CHARACTERISTICS AND RATINGS
Symbol Parameter
Min. Max. Units
V_DD
Supply Voltage
-0.5
7.0
V
V_IN
Input Voltage
-0.3 V_DD+0.3 V
T_A
Operating Temperature -55
125
°C
T_S
Storage Temperature
-65
150
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Figure 2: Absolute Maximum Ratings
The following D.C. and A.C. electrical characteristics apply to pre-radiation at T_A = -55°C to +125°C, V_DD = 5V ±10% and post
100kRad(Si) total dose radiation at T_A = 25°C, V_DD = 5V ±10%. GROUP A SUBGROUP 1, 2, 3.
Symbol Parameter
Conditions
Min. Typ. Max. Unit
V_IH Input logic '1' voltage
-
2.0
-
-
V
V_IL Input logic '0' voltage
-
-
-
0.8
V
I_IL
Input leakage current (any input) (Note 4)
Note 1
-10
-
10
µA
I_OL Output leakage current (Note 4)
Note 2
-50
-
50
µA
V_OH Output logic '1' voltage
l_OUT = -1mA
2.4
-
-
V
V_OL Output loglc '0' voltage
l_OUT = 2mA
-
-
0.4
V
I_DD1 Average V_DD power supply current (Note 3) Freq = 10MHz
-
70 100 mA
I_DD2 Average standby current (Note 3)
R = W = RS = FL/RT = V_DD/2
-
8
15 mA
I_DD3(L) Powerdown current (Note 3)
All Inputs = V_DD -0.2V
-
-
3.0 mA
NOTES:
1. Measurements with V_SS ≤ V_IN ≤ V_DD
2. R > V_IH, V_SS ≤ V_OUT ≤ V_DD
3. I_DD measurements are made wlth outputs open, V_DD = 5.5V
4. Guaranteed but not measured at -55°C
Figure 3a: DC Electrical Characteristics
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