MMBT3906 Datasheet, PDF (3/5 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
RATINGS AND CHARACTERISTIC CURVES
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
SWITCHING CHARACTERISTICS
Delay Time
(V CC = –3.0 Vdc, VBE =
td
Rise Time
0.5 Vdc,I C = –10 mAdc,
tr
IB1= – 1.0 mAdc)
Storage Time
(VCC = – 3.0 Vdc, I C =
ts
Fall Time
–10 mAdc,IB1 = IB2=
–1.0 mAdc)
tf
–
–
35
–
–
35
ns
–
–
225
–
–
75
< 1 ns
±0.5 V
10 k
10.6 V
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
0
CS < 4 pF*
10 < t1< 500us
t1
DUTY CYCLE = 2%
< 1 ns
10.9 V
10 k
1N916
3V
275
CS < 4 pF*
Figure 1. Delay and Rise Time
Equivalent Test Circuit
* Total shunt capacitance of test jig and connectors
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
Cobo
Cibo
3.0
2.0
1.0
0.1
500
300
200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS ( VOLTS )
Figure 3. Capacitance
20 30 40
IC/IB=10
100
70
50
30
20
10
7
5
1.0
tr @ VCC=3.0 V
15 V
td @ VOB=0 V
40 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT ( mA )
Figure 5. Turn-On Time
5000
3000
2000
VCC=40 V
IC/IB=10
TJ=25^oC
TJ=125^oC
1000
700
500
300
200
100
70
50
1.0
500
300
200
100
70
50
QT
QA
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT ( mA )
Figure 4. Charge Data
IC/IB=20
VCC=40 V
IB1=IB2
30
20
IC/IB=10
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT ( mA )
Figure 6. Fall Time