MMBT3906 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage - -40 Volts Power Dissipation - 300 mWatt
FEATURES
● Epitaxial Planar Die Construction
● Complementary NPN Type Available
(MMBT3904)
● Ideal for Medium Power Amplification and
Switching
MECHANICAL DATA
● Case: SOT-23, Molded Plastic
● Case Material - UL Flammability Rating
Classification 94V-0
● Terminals: Solderable per MIL-STD-202,
Method 208
● Marking: Device Code
● Weight: 0.008 grams (approx.)
A
C
BC
B TOP VIEW E
E
D
G
H
K
M
J
L
3
C
B
E
1
2
Top View
3
Collector
COLLECTOR
3
BASE
1
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
0
8
All Dimensions in mm
1
2
Base Emitter
2
EMITTER
● MAXIMUM RATING (Ta = 25℃)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
-40
-60
-5
-200
Unit
Vdc
Vdc
Vdc
mAdc
●THERMAL CHARACTERISTICS
Total Device Dissipation,
FR-5 Board (Note1) @TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Total Device Dissipation,
Alumina Substrate (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction–to–Ambient(Note 2)
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina.
PD
RΘJA
PD
RΘJA
TJ,Tstg
225
1.8
556
300
2.4
417
−55∼+150
mW
mW/℃
℃/W
mW
mW/℃
℃/W
℃