MMBT3906 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage - -40 Volts Power Dissipation - 300 mWatt
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
VBR(CEO)
(IC = –1.0 mAdc, IB= 0)
Collector–Base Breakdown Voltage
VBR(CBO)
(IC = –10 μAdc, IE = 0)
Emitter–Base Breakdown Voltage
VBR(EBO)
(IE = –10 μAdc, IC = 0)
Collector Cutoff Current
ICEX
( V CE = –30 Vdc, VEB =– 3.0Vdc)
Base Cutoff Current
IBL
(V CE = –30 Vdc, VEB = –3.0Vdc)
ON CHARACTERISTICS (Note 1.)
DC Current Gain
hFE
(IC = –0.1 mAdc, VCE = – 1.0 Vdc)
(IC = –1.0 mAdc, VCE = – 1.0 Vdc)
(IC = –10 mAdc, VCE = – 1.0 Vdc)
(IC = –50 mAdc, VCE = – 1.0 Vdc)
(IC = –100 mAdc, VCE = – 1.0 Vdc)
Collector–Emitter Saturation Voltage(3)
VCE(sat)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50mAdc, IB = – 5.0 mAdc)
Base–Emitter Saturation Voltage
VBE(sat)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50mAdc, IB = – 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Characteristic
Current–Gain — Bandwidth Product
(IC = –10mAdc, VCE= –20Vdc, f = 100MHz)
Output Capacitance
(V CB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE =– 10 Vdc, IC = –1.0mAdc,f=1.0 kHz)
Voltage Feedback Ratio
Symbol
fT
Cobo
Cibo
hie
hre
(VCE = –10 Vdc, IC = –1.0mAdc,f=1.0 kHz)
Small–Signal Current Gain
hfe
(V CE=–10 Vdc, IC =–1.0mAdc,f=1.0 kHz)
Output Admittance
hoe
(V CE=–10 Vdc, IC =–1.0mAdc,f =1.0kHz)
Noise Figure
NF
(VCE=–5V,I C=–100μA, RS=1.0kΩ ,f=1.0kHz)
3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.
Min.
–40
–40
–5
–
–
60
80
100
60
30
–
–
–0.65
–
Min.
250
–
–
2
0.1
100
3
–
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
Max.
Unit
V
–
V
–
V
–
nA
–50
nA
–50
–
–
300
–
–
–0.25
–0.4
–0.85
–0.95
Max.
–
4.5
10
12
10
400
60
4
V
V
Unit
MHz
pF
pF
kΩ
X 10 ^–4
μmhos
dB