ZXTC6717MC_15 Datasheet, PDF (6/9 Pages) Diodes Incorporated – COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR

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ZXTC6717MC
PNP - Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
I_CES
h_FE
Min Typ Max
-20
-35
-
-12
-25
-
-7
-8.5
-
-
-
-100
-
-
-100
-
-
-100
300 475
-
300 450
-
180 275
-
60
100
-
45
70
-
-
-
Collector-Emitter Saturation Voltage (Note 12)
V_CE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
V_BE(on)
-
V_BE(sat)
-
C_obo
-
Transition Frequency
f_T
100
Turn-on Time
Turn-off Time
t_on
-
t_off
-
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
-10
-100
-100
-195
-240
-0.87
-0.97
21
110
70
130
-17
-140
-150
-300
-310
-0.96
-1.07
30
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = -100µA
I_C = -10mA
I_E = -100µA
V_CB = -16V
V_EB = -6V
V_CES = -10V
I_C = -10mA, V_CE = -2V
I_C = -100mA, V_CE = -2V
I_C = -2.5A, V_CE = -2V
I_C = -8A, V_CE = -2V
I_C = -10A, V_CE = -2V
I_C = -0.1A, I_B = -10mA
I_C = -1A, I_B = -10mA
I_C = -1.5A, I_B = -50mA
I_C = -3A, I_B = -50mA
I_C = -4A, I_B = -150mA
I_C = -4A, V_CE = -2V
I_C = -4A, I_B = -150mA
V_CB = -10V. f = 1MHz
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CC = -6V, I_C = -2A
I_B1 = I_B2 = -50mA
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
6 of 9
www.diodes.com
October 2012
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