ZXTC6717MC_15 Datasheet, PDF (3/9 Pages) Diodes Incorporated – COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR

Thermal Characteristics and Derating Information
A Product Line of
Diodes Incorporated
ZXTC6717MC
V
CE(SAT)
10 _Limited
DC
1
1s
100ms _10ms
0.1
8sqcm 2oz Cu
One active die
Single Pulse, T =25°C
amb
0.01
0.1
1
1ms
100us
10
V Collector-Emitter Voltage (V)
CE
NPN Safe Operating Area
80 ^{8sqcm 2oz Cu}
One active die
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
3.5
T =25°C
3.0
amb
T =150°C
j max
2.5 ^Continuous
2oz Cu
Two active die
2.0
2oz Cu
One active die
1.5
1.0
0.5
0.0
100m
1oz Cu
1oz Cu
Two active die
One active die
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
V
10
CE(SAT)
Limited
DC
1
1s
100ms
0.1
8sqcm 2oz Cu
10ms
1ms
100us
One active die
Single Pulse, T =25°C
amb
0.01
0.1
1
10
-V Collector-Emitter Voltage (V)
CE
PNP Safe Operating Area
2.0
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
1.0
10sqcm 1oz Cu
One active die
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
225
200
1oz Cu
175
One active die
1oz Cu
150
Two active die
125
100
75 _{2oz Cu}
50 ^{Once active die}
25
2oz Cu
Two active die
0
0.1
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
3 of 9
www.diodes.com
October 2012
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