ZXTC6717MC Datasheet, PDF (6/9 Pages) Diodes Incorporated – DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION

A Product Line of
Diodes Incorporated
ZXTC6717MC
PNP - Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 10)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
I_CES
h_FE
Min Typ
-20
-35
-12
-25
-7
-8.5
-
-
-
-
-
-
300 475
300 450
180 275
60
100
45
70
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
V_CE(sat)
V_BE(on)
V_BE(sat)
C_obo
f_T
t_on
t_off
-
-10
-
-100
-
-100
-
-195
-
-240
-
-0.87
-
-0.97
-
21
100 110
-
70
-
130
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-17
-140
-150
-300
-310
-0.96
-1.07
30
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = -100µA
I_C = -10mA
I_E = -100µA
V_CB = -16V
V_EB = -6V
V_CES = -10V
I_C = -10mA, V_CE = -2V
I_C = -100mA, V_CE = -2V
I_C = -2.5A, V_CE = -2V
I_C = -8A, V_CE = -2V
I_C = -10A, V_CE = -2V
I_C = -0.1A, I_B = -10mA
I_C = -1A, I_B = -10mA
I_C = -1.5A, I_B = -50mA
I_C = -3A, I_B = -50mA
I_C = -4A, I_B = -150mA
I_C = -4A, V_CE = -2V
I_C = -4A, I_B = -150mA
V_CB = -10V. f = 1MHz
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CC = -6V, I_C = -2A
I_B1 = I_B2 = -50mA
ZXTC6717MC
Document number: DS31926 Rev. 3 - 2
6 of 9
www.diodes.com
December 2010
© Diodes Incorporated