ZXTC6717MC Datasheet, PDF (4/9 Pages) Diodes Incorporated – DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION

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Diodes Incorporated
ZXTC6717MC
NPN - Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
I_CES
h_FE
Min Typ
40
70
15
18
7
8.2
-
-
-
-
-
-
200 415
300 450
200 320
150 240
-
80
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
V_CE(sat)
V_BE(on)
V_BE(sat)
C_obo
f_T
t_on
t_off
8
70
-
165
240
200
-
0.88
-
0.94
-
30
80
120
-
120
-
160
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
-
-
-
100
100
100
-
-
-
-
-
14
100
200
310
-
0.96
1.05
40
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = 100µA
I_C = 10mA
I_E = 100µA
V_CB = 30V
V_EB = 6V
V_CE = 12V
I_C = 10mA, V_CE = 2V
I_C = 200mA, V_CE = 2V
I_C = 3A, V_CE = 2V
I_C = 5A, V_CE = 2V
I_C = 12A, V_CE = 2V
I_C = 0.1A, I_B = 10mA
I_C = 1A, I_B = 10mA
I_C = 3A, I_B = 50mA
I_C = 4.5A, I_B = 50mA
I_C = 4.5A, I_B = 100mA
I_C = 4.5A, V_CE = 2V
I_C = 4.5A, I_B = 50mA
V_CB = 10V. f = 1MHz
V_CE = 10V, I_C = 50mA,
f = 100MHz
V_CC = 10V, I_C = 1A
I_B1 = I_B2 = 10mA
ZXTC6717MC
Document number: DS31926 Rev. 3 - 2
4 of 9
www.diodes.com
December 2010
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