ZXTC6717MC Datasheet, PDF (2/9 Pages) Diodes Incorporated – DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION

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ZXTC6717MC
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
NPN
PNP
Unit
Collector-Base Voltage
V_CBO
40
-20
V
Collector-Emitter Voltage
V_CEO
15
-12
V
Emitter-Base Voltage
V_EBO
7
-7
V
Peak Pulse Current
I_CM
15
Continuous Collector Current
(Notes 3 & 6)
(Notes 4 & 6)
I_C
4.5
5
-12
A
-4
-4.45
A
Base Current
I_B
1
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 3 & 6)
(Notes 4 & 6)
(Notes 5 & 6)
(Notes 5 & 7)
(Notes 3 & 6)
(Notes 4 & 6)
(Notes 5 & 6)
(Notes 5 & 7)
Symbol
P_D
R_θJA
NPN
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
PNP
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
(Notes 6 & 8)
R_θJL
17.1
Operating and Storage Temperature Range
T_J, T_STG
-55 to +150
°C
Notes:
3. For a dual device surface mounted on 28mm x 28mm (8cm²) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm²) FR4 PCB with high coverage of single sided 1oz copper.
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTC6717MC
Document number: DS31926 Rev. 3 - 2
2 of 9
www.diodes.com
December 2010
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