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ZXTC4591AMC_15 Datasheet, PDF (6/9 Pages) Diodes Incorporated – COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR
A Product Line of
Diodes Incorporated
ZXTC4591AMC
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ Max
-40
-
-
-40
-
-
-7
-
-
-
-
-100
-
-
-100
-
-
-100
300
-
-
300
-
800
250
-
-
160
-
-
30
-
-
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
VCE(sat)
VBE(on)
VBE(sat)
Cobo
-
-
-200
-
-
-350
-
-
-500
-
-
-1.0
-
-
-1.1
-
-
10
Transition Frequency
fT
150
-
-
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -30V
VEB = -4V
VCE = -30V
IC = -1mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -0.1A, IB = -1mA
IC = -0.5A, IB = -20mA
IC = -1.0A, IB = -100mA
IC = -1A, VCE = -5V
IC = -1A, IB = -50mA
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
6 of 9
www.diodes.com
October 2012
© Diodes Incorporated