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ZXTC4591AMC_15 Datasheet, PDF (4/9 Pages) Diodes Incorporated – COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR
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Diodes Incorporated
ZXTC4591AMC
NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
Transition Frequency
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
Min Typ Max
40
-
-
40
-
-
7
-
-
-
-
100
-
-
100
-
-
100
300
-
-
300
-
900
200
-
-
35
-
-
-
-
300
-
-
500
-
-
1.0
-
-
1.1
-
-
10
150
-
-
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 30V
VEB = 4V
VCE = 30V
IC = 1mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 0.5A, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, VCE = 5V
IC = 1A, IB = 100mA
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
4 of 9
www.diodes.com
October 2012
© Diodes Incorporated