ZXTC4591AMC_15 Datasheet, PDF (2/9 Pages) Diodes Incorporated – COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR

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Diodes Incorporated
ZXTC4591AMC
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Parameter
Continuous Collector Current
Base Current
(Notes 6 & 9)
(Notes 7 & 9)
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
NPN
PNP
Unit
40
-40
40
-40
V
7
-7
3
-3
2
-1.5
A
2.5
-2
300
mA
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 6 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 8 & 10)
(Notes 6 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 8 & 10)
(Notes 9 & 11)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
NPN
PNP
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
6. For a dual device surface mounted on 28mm x 28mm (8cm²) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
7. Same as note (6), except the device is measured at t <5 sec.
8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm²) FR4 PCB with high coverage of single sided 1oz copper.
9. For a dual device with one active die.
10. For dual device with 2 active die running at equal power.
11. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
2 of 9
www.diodes.com
October 2012
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