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| ZXTC4591AMC Datasheet, PDF (6/9 Pages) Diodes Incorporated – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR | |||
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A Product Line of
Diodes Incorporated
ZXTC4591AMC
Electrical Characteristics, PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 4)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
Min Typ Max
Unit
-40
-
-
V
-40
-
-
V
5
-
-
V
-
-
-100
nA
-
-
-100
ï nA
-
-
-100
nA
300
-
-
300
-
800
250
-
-
-
160
-
-
30
-
-
Collector-Emitter Saturation Voltage
(Note 4)
Base-Emitter Turn-On Voltage(Note 4)
Base-Emitter Saturation Voltage(Note 4)
Output Capacitance
VCE(sat)
VBE(on)
VBE(sat)
Cobo
-
-
-200
-
-
-350
mV
-
-
-500
-
-
-1.0
V
-
-
-1.1
V
-
-
10
pF
Transition Frequency
fT
150
-
-
MHz
Notes: 4. Measured under pulsed conditions.
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -30V
VEB = -4V
VCE = -30V
IC = -1mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -0.1A, IB = -1mA
IC = -0.5A, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -5V
IC = -1A, IB = -50mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
6 of 9
www.diodes.com
January 2010
© Diodes Incorporated
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