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ZXTC4591AMC Datasheet, PDF (2/9 Pages) Diodes Incorporated – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
A Product Line of
Diodes Incorporated
ZXTC4591AMC
Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current(a)(f)
Continuous Collector Current(b)(f)
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IC
IB
NPN
40
40
5
3
2
2.5
PNP
-40
-40
-5
-3
-1.5
-2.0
300
Unit
V
V
V
A
A
A
mA
Thermal Characteristics
Characteristic
Power Dissipation at TA = 25°C (a) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (b) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (c) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (d) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (d) (g)
Linear Derating Factor
Power Dissipation at TA = 25°C (e) (g)
Linear Derating Factor
Junction to Ambient (a) (f)
Junction to Ambient (b) (f)
Junction to Ambient (c) (f)
Junction to Ambient (d) (f)
Junction to Ambient (d) (g)
Junction to Ambient (e) (g)
Junction Temerature
Storage Temperature Range
Symbol
PD
PD
PD
PD
PD
PD
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
TJ
TSTG
Value
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
83.3
51
125
111
73.5
41.7
150
-55 to +150
Unit
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
Notes:
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper
area is split down the centre line into two separate areas with one half connected to each half of the dual device.
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
f. For a dual device with one active die.
g. For dual device with 2 active die running at equal power.
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
2 of 9
www.diodes.com
January 2010
© Diodes Incorporated