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ZXTC4591AMC Datasheet, PDF (4/9 Pages) Diodes Incorporated – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
◁
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Diodes Incorporated
ZXTC4591AMC
Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 3)
Collector-Emitter Saturation Voltage
(Note 3)
Base-Emitter Turn-On Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(on)
VBE(sat)
Cobo
Min Typ Max
Unit
40
-
-
V
40
-
-
V
5
-
-
V
-
-
100
nA
-
-
100
nA
-
-
100
nA
300
-
-
300
-
900
200
-
-
-
35
-
-
-
-
-
-
300
500
mV
-
-
1.0
V
-
-
1.1
V
-
-
10
pF
Transition Frequency
fT
150
-
-
MHz
Notes:
3. Measured under pulsed conditions.
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 30V
VEB = 4V
VCE = 30V
IC = 1mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 0.5A, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, VCE = 5V
IC = 1A, IB = 100mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
4 of 9
www.diodes.com
January 2010
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