ZXTD6717E6_15 Datasheet, PDF (5/8 Pages) Diodes Incorporated – COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26

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Diodes Incorporated
ZXTD6717E6
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 11)
DC Current Gain
Symbol Min
BVCBO
-12
BVCEO
-12
BVEBO
-7
ICBO

IEBO

ICES

300
300
hFE
200
125
75
30
Collector-Emitter Saturation Voltage
VCE(sat)

Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VBE(sat)

VBE(on)

Cobo

Current Gain Bandwidth Product
fT

SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
ton

toff

Note: 11. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Typ



<-1
<-1
<-1
490
450
340
250
140
80
-25
-55
-110
-160
-185
-0.99
-0.85
15
220
50
135
Max



-10
-10
-10






-40
-100
-175
-215
-240
-1.10
-1.0




Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA V_CB = -10V
nA V_EB = -5.6V
nA V_CE = -10V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V

IC = -500mA, VCE = -2V
IC = -1.25A, VCE = -2V
IC = -2A, VCE = -2V
IC = -3A, VCE = -2V
mV ^IC ^{= -100mA, I}B ^{= -10mA}
mV IC = -250mA, IB = -10mA
mV I_C = -500mA, I_B = -10mA
mV _{IC = -1A, IB = -50mA}
mV _{IC = -1.25A, IB = -100mA}
V I_C = -1.25A, I_B = -100mA
V I_C = -1.25A, V_CE = -2V
pF
MHz
VCB = -10V, f = 1.0MHz
IC = -50mA, VCE = -10V
f = 100MHz
ns I_C = -1A, V_CC = -10V
ns I_B1 = -I_B2 = -100mA
ZXTD6717E6
Document Number: DS33653 Rev: 4 - 2
5 of 8
www.diodes.com
March 2015
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