ZXTD6717E6_15 Datasheet, PDF (2/8 Pages) Diodes Incorporated – COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26

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Diodes Incorporated
ZXTD6717E6
NPN - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Value
15
15
7
5
1.5
200
PNP - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Value
-12
-12
-7
-3
-1.25
-200
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
1.1
8.8
1.7
13.6
125
45
95
-55 to +150
Unit
V
V
V
A
A
mA
Unit
V
V
V
A
A
mA
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state. Two active dice running at equal power with heatsink split 50% to each collector.
7. Same as Note 6, except the device is measured at t < 5 seconds.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTD6717E6
Document Number: DS33653 Rev: 4 - 2
2 of 8
www.diodes.com
March 2015
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