ZXTD6717E6_15 Datasheet, PDF (3/8 Pages) Diodes Incorporated – COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26

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Diodes Incorporated
ZXTD6717E6
NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
ton
toff
Min Typ Max
15


15


7



<-1 10

<-1 10

<-1 10
200 420 ^
300 450 
250 390 
200 300 
75 150 _
30
75

16.5 20
40
55

75 100
150 200
205 245
 0.93 1.10
 0.865 1.10

15

 180 

50

 250 
Note: 10. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Unit
Test Condition
V I_C = 100µA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100µA, I_C = 0
nA V_CB = 10V
nA V_EB =5.6
nA V_CE = 10V
IC = 10mA, VCE = 2V
IC = 100mA, VCE = 2V

IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
mV ^IC ^{= 100mA, I}B ^{= 10mA}
mV IC = 250mA, IB = 10mA
mV I_C = 500mA, I_B = 10mA
mV _{IC = 1A, IB = 10mA}
mV _{IC = 1.5A, IB = 20mA}
V I_C = 1.5A, I_B = 20mA
V I_C = 1.5A, V_CE = 2V
pF
MHz
VCB = 10V, f = 1.0MHz
IC = 50mA, VCE = 10V
f = 100MHz
ns I_C = 1A, V_CC = 10V
ns I_B1 = -I_B2 = 100mA
ZXTD6717E6
Document Number: DS33653 Rev: 4 - 2
3 of 8
www.diodes.com
March 2015
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