ZXTC2063E6_15 Datasheet, PDF (5/9 Pages) Diodes Incorporated – 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

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Diodes Incorporated
ZXTC2063E6
Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 14)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage (reverse blocking)
Emitter-Collector Breakdown Voltage (base open)
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 14)
Symbol
BVCBO
BVCEO
BVEBO
BVECX
BVECO
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
td
tr
ts
tf
Min Typ Max Unit
Test Condition
-45 -80 
-40 -65 
-7 -8.3 
-6 -7.4 
-3 -8.7 
 <1 -50

-20

<1 -50
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
V ^{-IE = 100µA, RBC < 1kΩ or}
0.25V < VBC < -0.25V
V I_E = -100µA
nA VCB = -36V
µA _{VCB = -36V, TA = +100°C}
nA V_EB = -5.6V
300 450 900
IC = -10mA, VCE = -2V
200 280 
20
50

 I_C = -1.0A, V_CE = -2V
IC = -3.0A, VCE = -2V
 -70 -90
IC = -1.0A, IB = -100mA
 -195 -290
 -175 -260
mV I_C = -1.0A, I_B = -20mA
IC = -3.0A, IB = -300mA
 -935 -1,000 mV I_C = -3.0A, I_B = -300mA
 -855 -950
mV I_C = -3.0A, V_CE = -2V

17
25
pF V_CB = -10V, f = 1.0MHz

270 
MHz V_CE = -10V, I_C = -50mA, f = 100MHz

57

ns

69

 154 
ns
ns ^{VCC = -10V, IC = -1A, IB1 = IB2 = -10mA}

60

ns
Note: 14. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
ZXTC2063E6
Document Number: DS33648 Rev: 4 - 2
5 of 9
www.diodes.com
May 2015
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