ZXTC2063E6_15 Datasheet, PDF (4/9 Pages) Diodes Incorporated – 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

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ZXTC2063E6
Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min Typ Max
130 170 
40
63

7
8.3 
Emitter-Collector Breakdown Voltage (reverse blocking) BV_ECX
6
7.4 
Emitter-Collector Breakdown Voltage (base open)
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 13)
DC Current Gain
BVECO
ICBO
IEBO
hFE
6
7.4 

<1
50
20

<1
50
300 450 900
280 400
40
60
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
td
tr
ts
tf
50
60

85 110
150 220
135 195
 960 1,050
 860 950

12
20
 190 

64

 108 
 428 
 130 
Note: 13. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
Unit
Test Condition
V I_C = 100µA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100µA, I_C = 0
V ^{IE =100µA, RBC < 1kΩ or}
0.25V > VBC > -0.25V
V I_E = 100µA
nA VCB = 100V
µA _{VCB = 100V, TA = +100°C}
nA V_EB = 5.6V
IC = 10mA, VCE = 2V
 I_C = 1.0A, V_CE = 2V
IC = 3.5A, VCE = 2V
IC = 1.0A, IB = 100mA
mV ^{IC = 1.0A, IB = 20mA}
IC = 2.0A, IB = 40mA
IC = 3.5A, IB = 350mA
mV I_C = 3.5A, I_B = 350mA
mV I_C = 3.5A, V_CE = 2V
pF
MHz
ns
ns
ns
ns
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA, f = 100MHz
VCC = 10V, IC = 1A, IB1 = IB2 = 10mA
ZXTC2063E6
Document Number: DS33648 Rev: 4 - 2
4 of 9
www.diodes.com
May 2015
© Diodes Incorporated