ZXTC2063E6_15 Datasheet, PDF (2/9 Pages) Diodes Incorporated – 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

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Diodes Incorporated
ZXTC2063E6
Absolute Maximum Ratings – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Symbol
VCBO
VCEO
VECO
VEBO
IC
ICM
IB
Value
130
40
6
7
3.5
9
1
Unit
V
V
V
V
A
A
A
Absolute Maximum Ratings – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Symbol
VCBO
VCEO
VECO
VEBO
IC
ICM
IB
Value
-45
-40
-3
-7
-3
-9
-1
Unit
V
V
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
(Notes 5 & 9)
Symbol
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
(Notes 6 & 10)
PD
(Notes 7 & 9)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 8 & 9)
(Notes 5 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Note 11)
R_JA
R_JL
TJ, TSTG
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
87.58
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 12)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as Note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.
7. Same as Note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.
8. Same as Note (7), except the device is measured at t < 5 seconds.
9. For device with one active die, both collectors attached to a common heatsink.
10. For device with two active dice running at equal power, split heatsink 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTC2063E6
Document Number: DS33648 Rev: 4 - 2
2 of 9
www.diodes.com
May 2015
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