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MMDT3946_15 Datasheet, PDF (5/8 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor
MMDT3946
Electrical Characteristics, PNP 3906 (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
Max
Unit
Test Condition
BVCBO
-40

BVCEO
-40

BVEBO
-5.0

ICEX

-50
IBL

-50
V IC = -10µA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10µA, IC = 0
nA VCE = -30V, VEB(OFF) = -3.0V
nA VCE = -30V, VEB(OFF) = -3.0V
60
80
hFE
100
60
30
VCE(SAT)
VBE(SAT)

-0.65



300


-0.25
-0.40
-0.85
-0.95
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
 IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Cobo

4.5
pF VCB = -5.0V, f = 1.0MHz, IE = 0
Cibo

10
pF VEB = -0.5V, f = 1.0MHz, IC = 0
hie
2.0
12
kΩ
hre
0.1
10
x 10-4 VCE = 10V, IC = 1.0mA,
hfe
100
400
 f = 1.0kHz
hoe
3.0
60
µS
fT
250

MHz
VCE = -20V, IC = -10mA,
f = 100MHz
NF

4.0
dB VCE = -5.0V, IC = -100µA,
RS = 1.0kΩ, f = 1.0kHz
td

35
ns VCC = -3.0V, IC = -10mA,
tr

35
ns VBE(off) = 0.5V, IB1 = -1.0mA
ts

225
ns VCC = -3.0V, IC = -10mA,
tf

75
ns IB1 = IB2 = -1.0mA
MMDT3946
Datasheet Number DS30123 Rev.12 - 2
5 of 8
www.diodes.com
July 2014
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