MMDT3946_15 Datasheet, PDF (2/8 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Absolute Maximum Ratings, NPN 3904 (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6.0
200
MMDT3946
Unit
V
V
V
mA
Absolute Maximum Ratings, PNP 3906 (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
-40
-5.0
-200
Unit
V
V
V
mA
Thermal Characteristics, Total Device (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
R_θJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Notes: 5. For a device mounted on minimum recommended pad layout that is on a single-sided 0.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Dissipation vs.
Ambient Temperature (Total Device)
MMDT3946
Datasheet Number DS30123 Rev.12 - 2
2 of 8
www.diodes.com
July 2014
© Diodes Incorporated