MMDT3946_15 Datasheet, PDF (3/8 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

MMDT3946
Electrical Characteristics, NPN 3904 (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
BVCBO
60
BVCEO
40
BVEBO
5.0
ICEX

IBL

40
70
hFE
100
60
30
VCE(SAT)
VBE(SAT)

0.65

Cobo

Cibo

hie
1.0
hre
0.5
hfe
100
hoe
1.0
fT
300
NF

td

tr

ts

tf

Max Unit
Test Condition

V I_C = 10µA, I_E = 0

V I_C = 1.0mA, I_B = 0
6.0
V I_E = 10µA, I_C = 0
50
nA V_CE = 30V, V_EB(OFF) = 3.0V
50
nA V_CE = 30V, V_EB(OFF) = 3.0V


300


0.20
0.30
0.85
0.95
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
 ^{IC = 10mA, VCE = 1.0V}
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
V ^{IC = 10mA, IB = 1.0mA}
IC = 50mA, IB = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
IC = 50mA, IB = 5.0mA
4.0
pF V_CB = 5.0V, f = 1.0MHz, I_E = 0
8.0
pF V_EB = 0.5V, f = 1.0MHz, I_C = 0
10
kΩ
8.0
x 10^-4 _{VCE = 10V, IC = 1.0mA,}
400
 ^{f = 1.0kHz}
40
µS

MHz
VCE = 20V, IC = 20mA,
f = 100MHz
5.0
dB ^{VCE = 5.0V, IC = 100µA,}
RS = 1.0kΩ, f = 1.0kHz
35
ns _{VCC = 3.0V, IC = 10mA,}
35
ns VBE(off) = - 0.5V, IB1 = 1.0mA
200
ns _{VCC = 3.0V, IC = 10mA,}
50
ns IB1 = IB2 = 1.0mA
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
MMDT3946
Datasheet Number DS30123 Rev.12 - 2
3 of 8
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July 2014
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