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| DST847BPDP6 Datasheet, PDF (5/8 Pages) Diodes Incorporated – COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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DST847BPDP6
Electrical Characteristics â Q2 PNP Transistor @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Symbol
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Voltage
VBE(on)
Current Gain-Bandwidth Product
fT
Output Capacitance
Cobo
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Min
-50
-50
-45
-6
-
100
200
-
-
-
-
-600
-
100
-
Typical
-100
-90
-65
-8.5
-
340
330
-70
-300
-760
-885
-670
-715
340
2.0
Max
-
-
-
-
-15
-
470
-175
-500
-1000
-1100
-780
-850
-
-
Unit
V
V
V
V
nA
-
mV
mV
mV
MHz
pF
Test Condition
IC = -10μA, IB = 0
IC = -10μA, IB = 0
IC = -1mA, IB = 0
IE = -1μA, IC = 0
VCB = -30V
IC = -10μA, VCE = -5V
IC = -2.0mA, VCE = -5V
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -2.0mA, VCE = -5V
IC = -10mA, VCE = -5V
VCE = -5V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
5 of 8
www.diodes.com
January 2010
© Diodes Incorporated
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