 English |
|
|
|
|
|
|
|
| DST847BPDP6 Datasheet, PDF (4/8 Pages) Diodes Incorporated – COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
| |||
| ◁ |
DST847BPDP6
Typical Characteristics â Q1 NPN Transistor
0.16
0.14
0.12
IB = 1.4mA
IB = 1.2mA
IB = 1.8mA IB = 2mA
IB = 1.6mA
0.10
0.08
0.06
IB = 1mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
0.04
0.02
IB = 0.2mA
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0.20
0.18
IC/IB = 10
0.16
0.14
0.12
0.10
0.08
0.06
TA = 150°C
TA = 100°C
0.04
0.02
TA = 25°C
TA = -55°C
0
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
VCE = 5V
450
400
350
300
TA = 150°C
TA = 100°C
VCE = 5V
250
200
TA = 25°C
150
100
TA = -55°C
50
0
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
IC/IB = 20
TA = 10°C
0.1
TA = 20°C
TA = 50°C
TA = 100°C
0.01
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.1
1.0
0.8
TA = -55°C
0.9
0.8
TA = -55°C
0.6
TA = 25°C
TA = 100°C
0.4
TA = 150°C
0.7
TA = 25°C
0.6
0.5
TA = 100°C
0.4
TA = 150°C
0.2
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
0.3
4 of 8
www.diodes.com
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
January 2010
© Diodes Incorporated
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese