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| DST847BPDP6 Datasheet, PDF (3/8 Pages) Diodes Incorporated – COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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DST847BPDP6
Electrical Characteristics â Q1 NPN Transistor @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
DC Current Gain
Symbol
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Voltage
VBE(on)
Current Gain-Bandwidth Product
fT
Collector-Base Capacitance
Ccbo
Notes: 4. Short duration pulse test used to minimize self-heating effect
Min Typical
50
150
50
150
45
65
6
8.35
-
-
100
220
200
300
-
50
-
122
-
760
-
880
580
650
725
100
175
-
1.5
Max
-
-
-
-
15
-
470
125
300
1000
1100
750
800
-
-
Unit
V
V
V
V
nA
-
mV
mV
mV
MHz
pF
Test Condition
IC = 10μA, IB = 0
IC = 10μA, IB = 0
IC = 1mA, IB = 0
IE = 1μA, IC = 0
VCB = 30V
IC = 10μA, VCE = 5V
IC = 2.0mA, VCE = 5V
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 2.0mA, VCE = 5V
IC = 10mA, VCE = 5V
VCE = 5V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
3 of 8
www.diodes.com
January 2010
© Diodes Incorporated
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