DSS8110Y_15 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 100V NPN LOW SATURATION TRANSISTOR IN SOT363

1.2
1.0
I_B = 5mA
0.8
I_B = 4mA
0.6
I_B = 3mA
0.4
I_B = 2mA
0.2
I_B = 1mA
0
0
2
4
6
8
10
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
I_C/I_B = 10
DSS8110Y
500
400
300
200
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
100
T_A = -55°C
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
1.2
V_CE = 10V
1.0
0.1
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.01
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
T_A = 125°C
0.2
T_A = 150°C
0
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
0.2
T_A = 150°C
T_A = 85°C
T_A = 125°C
0
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DSS8110Y
Document number: DS31679 Rev. 3 - 2
5 of 7
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July 2014
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