DSS8110Y_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V NPN LOW SATURATION TRANSISTOR IN SOT363

DSS8110Y
Absolute Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current – Continuous
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Symbol
P_D
R_JA
R_JL
T_J, T_STG
Value
120
100
5
1
3
0.3
Value
625
200
81
-55 to +150
Unit
V
V
V
A
A
A
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
Unit
4,000
V
400
V
Notes:
5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
JEDEC Class
3A
C
DSS8110Y
Document number: DS31679 Rev. 3 - 2
2 of 7
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July 2014
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