DSS8110Y_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V NPN LOW SATURATION TRANSISTOR IN SOT363

DSS8110Y
Thermal Characteristics and Derating Information
0.7
10
Pw = 100µs
0.6
0.5
1
DC
0.4
Pw = 100ms
0.1
Pw = 10ms
0.3
Pw = 1ms
0.2
0.1
R_JA = 200°C/W
0
0
50
100
150
200
T_A, AMBIENT TEMPERATURE (C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.01
0.001
0.1
1
10
100
1,000
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.1 _{D = 0.1}
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
D = 0.9
0.001
0.01
0.1
1
t₁, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
R_JA(t) = r(t) * R_JA
R_JA = 180°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_JA(t)
Duty Cycle, D = t₁/t₂
10
100
1,000
DSS8110Y
Document number: DS31679 Rev. 3 - 2
3 of 7
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July 2014
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