DSS4160T_15 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 60V NPN LOW SATURATION TRANSISTOR IN SOT23

1,000
800
T_A = 150°C
600
400
200
T_A = 85°C
T_A = 25°C
T_A = -55°C
V_CE = 5V
1
I_C/I_B = 10
0.1
0.01
DSS4160T
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1.2
V_CE = 5V
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2
T_A = 150°C
0
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
180
150
f = 1MHz
0.001
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2 _{TA = 150°C}
0
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
120
90
C_ibo
60
30
0
0.1
C_obo
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
DSS4160T
Document number: DS35531 Rev. 2 - 2
5 of 7
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May 2014
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