DSS4160T_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V NPN LOW SATURATION TRANSISTOR IN SOT23

Absolute Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current
Peak Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
80
60
5
1
2
300
1
Value
725
172
79
-55 to +150
DSS4160T
Unit
V
V
V
A
A
mA
A
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Thermal resistance from junction to solder-point (at the end of collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS4160T
Document number: DS35531 Rev. 2 - 2
2 of 7
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May 2014
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