DSS4160T_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V NPN LOW SATURATION TRANSISTOR IN SOT23

DSS4160T
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Transition Frequency
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Symbol Min
Typ
Max
Unit
Test Conditions
BV_CBO
80
⎯
⎯
V I_C = 100μA
BV_CEO
60
⎯
⎯
V I_C = 10mA
BV_EBO
5
⎯
⎯
V I_E = 100μA
⎯
I_CBO
⎯
⎯
100
nA V_CB = 60V, I_E = 0
⎯
50
μA V_CB = 60V, I_E = 0, T_A = +150°C
I_CES
⎯
⎯
100
nA V_EB = 60V, I_BE = 0
I_EBO
⎯
⎯
100
nA V_EB = 5V, I_C = 0
250
⎯
⎯
V_CE = 5V, I_C = 1mA
h_FE
200
⎯
⎯
⎯ V_CE = 5V, I_C = 500mA
100
⎯
⎯
V_CE = 5V, I_C = 1A
⎯
⎯
115
I_C = 100mA, I_B = 1mA
V_CE(sat)
⎯
⎯
150
mV I_C = 500mA, I_B = 50mA
⎯
⎯
280
I_C = 1A, I_B = 100mA
R_CE(sat)
⎯
⎯
280
mΩ I_E = 1A, I_B = 100mA
V_BE(sat)
⎯
⎯
1.1
V I_C = 1A, I_B = 50mA
V_BE(on)
⎯
⎯
0.9
V V_CE = 5V, I_C = 1A
f_T
150
⎯
⎯
MHz
V_CE = 10V, I_C = 50mA,
f = 100MHz
C_obo
⎯
⎯
10
pF V_CB = 10V, f = 1MHz
t_on
⎯
63
⎯
ns
t_d
⎯
33
⎯
ns
t_r
⎯
30
⎯
ns _{VCC = 10V, IC = 0.5A,}
t_off
⎯
420
⎯
ns IB1 = IB2 = 25mA
t_s
⎯
380
⎯
ns
t_f
⎯
40
⎯
ns
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
DSS4160T
Document number: DS35531 Rev. 2 - 2
4 of 7
www.diodes.com
May 2014
© Diodes Incorporated