74AUP2G34 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Low-power dual buffer

74AUP2G34
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
V_CC
T_A = -40 to +125°C
Unit
Min
Max
—
0.8V to 1.65V
0.80 X V_CC
—
V_IH
High-Level Input Voltage
—
1.65V to 1.95V
0.70 X V_CC
—
V
—
2.3V to 2.7V
1.6
—
—
3.0V to 3.6V
2.0
—
—
0.8V to 1.65V
—
0.25 X V_CC
V_IL
Low-Level Input Voltage
—
1.65V to 1.95V
—
0.30 X V_CC
V
—
2.3V to 2.7V
—
0.7
—
3.0V to 3.6V
—
0.9
I_OH = -20μA
0.8V to 3.6V
V_CC – 0.11
—
I_OH = -1.1mA
1.1V
0.6 X V_CC
—
I_OH = -1.7mA
1.4V
0.93
—
V_OH
High Level Output Voltage
I_OH = -1.9mA
I_OH = -2.3mA
I_OH = -3.1mA
1.65V
1.17
—
V
1.77
—
2.3V
1.67
—
I_OH = -2.7mA
I_OH = -4mA
2.40
—
3V
2.30
—
I_OL = 20μA
0.8V to 3.6V
—
0.11
I_OL = 1.1mA
1.1V
—
0.33 X V_CC
I_OL = 1.7mA
1.4V
—
0.41
V_OL
Low-Level Input Voltage
I_OL = 1.9mA
I_OL = 2.3mA
I_OL = 3.1mA
1.65V
2.3V
—
0.39
V
—
0.36
—
0.50
I_OL = 2.7mA
I_OL = 4mA
—
0.36
3V
—
0.50
I_I
Input Current
A or B Input
V_I = GND to 3.6V
0V to 3.6V
—
± 0.75
μA
I_OFF
Power Down Leakage Current
V_I or V_O = 0V to 3.6V
0V
—
± 1.0
μA
∆I_OFF Delta Power Down Leakage Current V_I or V_O = 0V to 3.6V
0V to 0.2V
—
± 2.5
μA
I_CC
Supply Current
V_I = GND or V_CC, I_O = 0
0.8V to 3.6V
—
1.4
μA
∆I_CC Additional Supply Current
Input at V_CC –0.6V Other
input at V_CC or GND
3.3V
—
75
μA
Operating and Package Characteristics
T_A = +25°C
Parameter
Test
Conditions
C_pd
Power dissipation
capacitance
f = 1MHz
No Load
C_I
Input Capacitance
Output
C_O
Capacitance
V_i = V_CC or GND
V_O = V_CC or GND
V_CC
0.8V
1.2V ± 0.1V
1.5V ± 0.1V
1.8V ± 0.15V
2.5V ± 0.2V
3.3V ± 0.3V
0V or 3.3V
0V
Typ
Unit
5.1
5.2
5.2
pF
5.5
5.7
6.0
2.0
pF
2.0
pF
74AUP2G34
Document number: DS35514 Rev. 5 - 2
5 of 12
www.diodes.com
May 2014
© Diodes Incorporated