ZXTP2013G_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

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ZXTP2013G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
R ≤1kΩ
IEBO
DC Current Transfer Static Ratio (Note 10)
hFE
Collector-Emitter Saturation Voltage (Note 10) V_CE(SAT)
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Transitional Frequency (Note 10)
VBE(SAT)
VBE(ON)
fT
Min
-140
-140
-100
-7
—
—
—
—
—
100
100
25
15
—
—
—
—
—
—
—
—
Typ
-160
-160
-115
-8.1
<1
—
<1
—
<1
250
200
50
30
5
-20
-70
-120
-240
-985
-920
125
Output Capacitance
Switching Time
Cobo
—
42
tON
—
42
tOFF
—
540
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
—
—
—
—
-20
-500
-20
-500
-10
—
300
—
—
—
-30
-90
-150
-340
-1,100
-1,050
—
—
—
—
Unit
V
V
V
V
nA
nA
nA
nA
nA
—
mV
mV
mV
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -1mA
IE = -100µA
VCB = -100V
VCB = -100V, TA = +100°C
VCB = -100V
VCB = -100V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -1V
IC = -1A, VCE = -1V
IC = -3A, VCE = -1V
IC = -4A, VCE = -1V
IC = -10A, VCE = -1V
IC = -100mA, IB = -10mA
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -4A, IB = -400mA
IC = -4A, IB = -400mA
IC = -4A, VCE = -1V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -50V, IC = -1A,
IB1 = -IB2 = -100mA
ZXTP2013G
Datasheet Number: DS33714 Rev. 3 - 2
4 of 7
www.diodes.com
May 2015
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